Silicon Carbide furnace tube
| Place of Origin: | China |
| Brand Name: | Semixlab |
| Model Number: | SCFT-01 |
| Certification: | ISO9001 |
| Minimum Order Quantity: | 1 Unit |
| Price: | Contact for Customized Quotation |
| Packaging Details: | Anti-Static Foam +Plywood box(Customizable) |
| Delivery Time: | 60-90 Days After Order Confirmation |
| Payment Terms: | T/T |
| Supply Ability: | 100 Units/Month |
Description
Semixlab provides Ultra-high purity SiC furnace tube system, semiconductor-grade thermal field solutions with 99.9999% coating purity and Complete line delivery.
Core value proposition
Provide a zero-pollution thermal environment for wafer manufacturing: 99.9% SiC purity of substrate + 99.9999% purity of CVD coating, combined with a complete SiC cantilever paddle & wafer boat system, to achieve zero metal pollution in the process chamber.
Different names for products:
High temperature SiC furnace tube;silicon carbide tube;High purity SiC tube;Silicon carbide tube for diffusion furnace;Silicon carbide tube for diffusion &LPCVD process;SiC tube for RTP,SiC tube for oxidation
Core specifications:
Material purity: The base material is silicon carbide with a purity of over 99.9%, and the purity after CVD coating is over 99.9999% (6N grade).
Thermal performance: Maximum operating temperature 1650℃ (long-term), coefficient of thermal expansion: 4.6×10⁻⁶/℃, uniformity in the constant temperature zone: ±1.5℃ (1200℃);
Mechanical strength: Bending strength 450Mpa(at room temperature).
Specifications
| Physical properties of Sintered Silicon Carbide | |
| Property | Typical Value |
| Chemical Composition | SiC>99.9% |
| Bulk Density | >3.07 g/cm³ |
| Apparent porosityApparent porosity | <0.1% |
| Modulus of rupture at 20℃ | 270 MPa |
| Modulus of rupture at 1200℃ | 290 MPa |
| Hardness at 20℃ | 2400 Kg/mm² |
| Fracture toughness at 20% | 3.3 MPa · m1/2 |
| Thermal Conductivity at 1200℃ | 45 w/m .K |
| Thermal expansion at 20-1200℃ | 4.6×10-6/℃ |
| Max.working temperature | 1650℃(long time) |
| Thermal shock resistance at 1200℃ | Good |
Applications
Main uses
Thermal field carrier
Establish a stable and uniform temperature field within the range of 1200℃ to 1650℃ (the temperature difference in the constant temperature zone is ≤±1.5℃)
Ensure the thermodynamic conditions of processes such as diffusion, oxidation and annealing.
Pollution isolation barrier
Block the diffusion of metal ions (such as Fe/Ni/Cu, etc.) through high-purity materials (such as SiC).
Prevent cross-contamination between process gases and the external environment.
Process gas channel
Precisely control the flow direction and distribution of reaction gases (such as O₂/N₂/SiH₄, etc.)
Achieve uniform gas-phase reactions on the wafer surface (such as SiO₂ growth).
Photovoltaic coating: Support TOPCon/HJT cell PECVD process wafer transport.
Application scenarios
● Epitaxy
● Oxidation/Diffusion
● LPCVD/PECVD process
● Annealing of III-V compound semiconductors
Solutions to industry pain points
Our solutions address the pain points of our customers:
1. High-temperature process particle contamination: 6N coating blocks impurity precipitation.
Frequent replacement of SiC in quartz components increases the corrosion resistance by 8 times.
2. CTE consistency design for thermal expansion mismatch of thermal field components in the entire series of SiC materials.
3. Ultra-polished surface treatment of metal contamination on the back of the wafer (Ra 0.2μm).
Competitive Advantage
Core advantages of component technical specifications:
1. SiC furnace tube - Base material purity: 99.9% sintered silicon carbide
▶ Thermal shock resistance is enhanced by 3 times (rapid cooling > 1600℃)
The coefficient of thermal expansion is as low as 4.6×10⁻⁶/℃
Nanoscale coating - CVD deposition of 6N-grade high-purity SiC (99.9999%)
▶ Blocking the diffusion of metals such as Fe and Ni
▶ Surface roughness Ra < 0.5μm
2. SiC wafer Boat - Compatible with 12-inch wafers
- Multi-layer load-bearing design
▶ 100% thermal matching with furnace tubes
The wafer contamination rate is less than 0.01 ppb
3. Cantilever paddle system - isostatic graphite substrate +SiC coating
- Automatic alignment accuracy ±0.1mm
▶ Creep resistance life > 100,000 times
The transmission vibration is less than 5μm
Disruptive technological highlights
The Purity Revolution
Two-level protection system
The base layer is 99.9% SiC → to build a high-strength framework
The 6N-level CVD-SiC in the functional layer forms an atomic-level sealed
barrier
Impurity control: Na/K < 0.1ppm, heavy metals < 5ppb, meeting the requirements of processes below 28nm
System synergy advantage
● Thermal field uniformity: Triple thermal coupling design of furnace tube + wafer boat + paddle blade, the temperature difference in the constant temperature zone (> 1200℃) is ≤±1.5℃
● Lifespan doubling: The entire solution extends the lifespan by 40% compared to the hybrid system, with MTBA exceeding 8,000 hours
Our Services
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