PZT Piezoelectric Wafers
With the explosive growth of 5G communications, precision medicine, and smart wearable devices, market demand for high-sensitivity, low-power MEMS transducers is on the rise. Our piezoelectric wafers (PZT on Si/SOI) utilize advanced thin-film deposition processes to achieve exceptional uniformity and superior piezoelectric properties on silicon substrates, serving as the fundamental core for efficient electro-mechanical energy conversion.
Description
Custom Services
In addition to offering standardized 8-inch PZT wafers, we provide extensive customization capabilities tailored to our clients' specific requirements:
● Substrate Diversity: We support deposition on both Si wafers and SOI wafers (with resistivity > 5000 ohm/cm).
● Thin Film Customization: Specific thin film types and thicknesses can be adjusted to meet design specifications.
● Flexible Sizing: We offer processing capabilities for both 6-inch and 8-inch wafer formats.
● Customer-Supplied Wafers: We accept customer-provided substrates for piezoelectric thin film growth.
Your Technical Partner: We are committed to providing comprehensive support—from material growth to structural customization. Whether you are in the laboratory R&D phase or at the mass production stage, our technical team is ready to provide the piezoelectric solutions best suited to your needs.
Specifications
Our standard products are manufactured using 6-inch and 8-inch processes, featuring sophisticated multi-layer structural designs that ensure stable performance throughout complex MEMS fabrication workflows.
Layer Structure Parameters (Standard 8-inch)
| Layer | Thickness | Note |
| Top Electrode | customized | Upper Electrode |
| Piezo Layer | customized | Core Piezoelectric Layer |
| Buffer Layer | customized | Grain Orientation Control Layer |
| Bottom Electrode | 100 nm ± 10% | Lower Electrode |
| Adhesion Layer | customized | Adhesion Layer |
| Substrate | customized | 4/6/8-inch Options Available |
Key Performance Indicators (Characteristics)
● Piezoelectric Constant (d31): 200 pC/N — Ensures highly efficient mechanical displacement output.
● Piezoelectric Coefficient (e31): −15 C/m² — Provides a highly sensitive electrical charge response.
● High Uniformity: Verified via XRD diffraction analysis, the PZT film exhibits a strong (100) orientation, ensuring exceptional performance uniformity across the entire wafer.
| PZT characteristics | Polycrystal PZT |
| Piezoelectric constant d31 | 200 pC/N |
| piezoelectric coefficient e31 | -14 C/m² |
| Curie temperature | X ℃ |
SEM image and XRD
Applications
Five Key Application Areas
1. Piezoelectric Ultrasonic Transducers (pMUT)
Leveraging the high piezoelectric constant of PZT thin films to create high-frequency, miniaturized ultrasonic arrays. Widely applied in under-display fingerprint recognition, gesture sensing, and automotive ultrasonic radar systems.
2. RF Filters & Communications (RF MEMS)
In 5G and 6G communication systems, high-performance piezoelectric materials are critical for manufacturing FBAR and SAW filters, enabling wider bandwidths and lower insertion losses.
3. Acoustic MEMS (Speakers/Microphones)
Empowering MEMS speakers with superior transient response and Sound Pressure Levels (SPL), while simultaneously boosting the Signal-to-Noise Ratio (SNR) of MEMS microphones to enable high-definition audio capture.
4. Precision Fluid Control (Inkjet Printheads)
Utilizing high-speed vibrations in the d31 mode to achieve nanoliter-level precision in ink droplet volume control; serves as the core actuation component for industrial-grade, high-resolution inkjet printing systems.
5. Medical Aesthetics & Micro-pumping
Driving medical nebulizers and aesthetic ultrasonic pumps. Leveraging the compact size and high reliability of PZT thin films, we enable the efficient atomization and precise delivery of liquid medications.
