Large-sized resistance-heating SiC crystal growth furnace
Semixlab Large-Sized Resistance-Heating SiC Crystal Growth Furnace is engineered for next-generation silicon carbide (SiC) boule production, providing the thermal stability, materials purity, and process control required for high-volume, high-quality SiC substrate manufacturing. Designed for advanced Physical Vapor Transport (PVT) crystal growth, the system delivers uniform high-temperature performance above 2,000 °C, precise axial and radial thermal-field control, and an extremely stable growth environment optimized for large-diameter 4H-SiC and 6H-SiC crystal production. We welcome your inquiry.
Description
Semixlab Large-Sized Resistance-Heating SiC Crystal Growth Furnace addresses the primary bottlenecks in the SiC materials supply chain: crystal uniformity, defect reduction, and scale-up to large-diameter substrates. The resistance-heating architecture ensures reproducible heat delivery through ultra-stable graphite heating elements, enabling controlled sublimation of high-purity SiC source materials and consistent re-condensation at the seed surface.
Within the PVT growth environment, the furnace establishes a precisely regulated vacuum or inert-gas ambient that supports ultra-low-contamination crystal growth. Its multi-zone PID temperature management and engineered thermal shielding ensure the ideal temperature gradient between SiC source and seed, stabilizing the mass-transport dynamics that define boule growth rate, radial uniformity, and electrical resistivity consistency. For N-type and semi-insulating SiC substrates alike, the furnace offers exceptional atmospheric control to support tight dopant and defect management.
The system’s advanced control software provides real-time monitoring of temperature distribution, pressure conditions, and growth-state parameters, enabling a highly repeatable and data-driven production workflow that meets modern semiconductor quality requirements. Combined with scalable chamber design, reinforced high-temperature materials, and long-lifetime thermal components, the furnace supports extended growth campaigns and reduced total cost of ownership (TCO) for SiC substrate manufacturers.
Semixlab’s Large-Sized Resistance-Heating SiC Crystal Growth Furnace is ideal for manufacturers aiming to transition toward 6- and 8-inch SiC boule production, expand high-voltage SiC substrate capacity. By integrating precision thermal engineering with robust semiconductor-grade process control, Semixlab delivers a growth platform that empowers customers to accelerate SiC technology development while maintaining superior materials quality, yield, and manufacturing efficiency.
The appearance and key parameters of SiC crystal growth furnace:
● PVT process
● Graphite resistance heating
● Operation temperature(max): 2400℃.
● Ultimate vacuum：≤9X10-5Pa.
● Pressure Rise Rate：≤1.0Pa/12h(cold).
● It has reached and exceeded the benchmark set by international leading enterprises in this industry, and is the best in the industry.
● The power of the crystal growth section：34.0KW.
● This furnace among the similar resistive crystal growth furnace has the lowest energy consumption and can reduce operating costs.
● The accuracy of pressure control：0.15Pa(The section of crystal growth)
● Compact in size improved the utilization rate of space and the density of equipment placement.
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